Compact power electronic systems require power devices with low power losses and high temperature capability.
TranSiC develops bipolar junction transistors (BJT) in silicon carbide (SiC) for near future compact power electronic systems.
Silicon Carbide is a semiconductor with wide bandgap, 3.2 eV. Compared to traditional Silicon, bandgap 1.1 eV, this gives our BitSiC an outstanding performance in terms of operating at very high temperatures.
In addition to this Silicon Carbide can handle 5 times higher electrical fields , 2.2 MV/cm, than Silicon.